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Ottaviani, L. and Yakimov, E. and Hidalgo Alcalde, Pedro and Martinuzzi, S. (2004) Investigations of defects introduced in 4H-SiC n-type epitaxial layers by hydrogen DC plasma. Silicon Carbide and Related Materials 2003, Prts 1 and 2, 457-46 . pp. 509-512. ISSN 0255-5476

Ottaviani, L. and Idrissi, H. and Hidalgo Alcalde, Pedro and Lancin, M. (2005) Structural and electrical studies of partial dislocations and stacking faults in (11-20)-oriented 4H-SiC. Physica Status Solidi C, 2 (6). pp. 1792-1796. ISSN 1610-1634

Hidalgo Alcalde, Pedro and Ottaviani, L. and Idrissi, H. and Lancin, M. and Martinuzzi, S. and Pichaud, B. (2004) Structural characterisation of (11(2)over-bar0) 4H-SiC substrates by cathodoluminescence and X-ray topography. European Physical Journal-Applied Physics, 27 (1-mar). pp. 231-233. ISSN 1286-0042

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