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Number of items: 41.

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Prado Millán, Álvaro del and Olea Ariza, Javier and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells. IEEE journal of photovoltaics, 6 (5). ISSN 2156-3381

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2011) Depth profile study of Ti implanted Si at very high doses. Journal of Applied Physics, 110 (6). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Double ion implantation and pulsed laser melting processes for third generation solar cells. International Journal of Photoenergy, 2013 . ISSN 1110-662x

Castán, Helena and Pérez, Eduardo and Dueñas, Salvador and Bailón, Luis and Olea Ariza, Javier and Pastor Pastor, David and García Hemme, Eric and Irigoyen Irigoyen, Maite and González Díaz, Germán (2012) Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation. In ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. AIP Conference proceedingsro . American Institute of Physics (AIP), pp. 189-192. ISBN 978-0-7354-1109-8

García, Héctor and Castán, Helena and Dueñas, Salvador and Bailón, Luis and García Hernansanz, Rodrigo and Olea Ariza, Javier and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio (2016) Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications. Nanoscale research letters, 11 . ISSN 1556-276X

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical decoupling effect on intermediate band Ti-implanted silicon layers. Journal of Physics D-Applied Physics, 46 (13). ISSN 0022-3727

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material. In Proceedings of the 2013 Spanich Conference on Electron Devices (CDE 2013). Spanish Conference on Electron Devices . IEEE, pp. 377-380. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Electronic transport properties of Ti-impurity band in Si. Journal of Physics D-Applied Physics, 42 (8). ISSN 0022-3727

Pérez, E. and Castán, H. and García, H. and Dueñas, S. and Bailón, L. and Montero Álvarez, Daniel and García-Hernansanz, R. and García Hemme, Eric and Olea Ariza, Javier and González Díaz, Germán (2015) Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications. Applied physics letters, 106 (2). ISSN 0003-6951

González Díaz, Germán and García Hemme, Eric and Olea Ariza, Javier and Pastor Pastor, David and Bailón, L. and Castán, H. and Dueñas, S. and García, H. and Pérez, E. (2013) Experimental verification of intermediate band formation on titanium-implanted silicon. Journal of Applied Physics, 113 (2). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon. Applied physics Letters, 103 (3). ISSN 0003-6951

Franco Peláez, Francisco Javier and Antoranz Canales, Pedro and Castillo Morales, África and García Payo, M. Carmen and Olea Ariza, Javier (2015) Fomento del uso de software libre de tipo científico en estudios de ciencias. [Proyecto de Innovación Docente]

Mártil de la Plaza, Ignacio and Olea Ariza, Javier and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2006) Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O-2 ratios. Materials Science in Semiconductor Processing, 9 (6). pp. 1020-1024. ISSN 1369-8001

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and San Andres Serrano, Enrique (2009) High Quality Ti-Implanted Si Layers Above Solid Solubility Limit. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 38-41. ISBN 978-1-4244-2838-0

Nuñez Cascajero, A. and Blasco, R. and Valdueza Felip, Sirona and Montero, D. and Olea Ariza, Javier and Naranjo, F. B. (2019) High quality Al0.37In0.63N layers grown at low temperature (< 300 degrees C) by radio-frequency sputtering. Materials Science in Semiconductor Processing, 100 . pp. 8-14. ISSN 1369-8001

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and San Andres Serrano, Enrique (2010) High quality Ti-implanted Si layers above the Mott limit. Journal of Applied Physics, 107 (10). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells. In Proceedings of the 2013 Spanisch Conference on Electron Devices. IEEE, pp. 337-340. ISBN 978-1-4673-4666-5

García Hemme, Eric and Montero Álvarez, Daniel and García Hernansanz, Rodrigo and Olea Ariza, Javier and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures. Journal of physics D: applied physics, 49 (27). ISSN 0022-3727

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Intermediate band mobility in heavily titanium-doped silicon layers. Solar Energy Materials and Solar Cells, 93 (9). pp. 1668-1673. ISSN 0927-0248

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2012) Interstitial Ti for intermediate band formation in Ti-supersaturated silicon. Journal of Applied Physics, 112 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material. In Ion Implantation Technology. American Institute of Physics, pp. 54-57.

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Laser thermal annealing effects on single crystal gallium phosphide. Journal of Applied Physics, 106 (5). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material. Applied physics Letters, 94 (4). ISSN 0003-6951

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Olea Ariza, Javier and San Andres Serrano, Enrique and Prado Millán, Álvaro del and Ferrer, F. J. and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Limitations of high pressure sputtering for amorphous silicon deposition. Materials research express, 3 (3). ISSN 2053-1591

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Low temperature intermediate band metallic behavior in Ti implanted Si. Thin Solid Films, 520 (21). pp. 6614-6618. ISSN 0040-6090

San Andrés Serrano, Enrique and González Díaz, Germán and Mártil de la Plaza, Ignacio and del Prado Millán, Álvaro and García Hemme, Eric and Pastor Pastor, David and Olea Ariza, Javier and Lucía Mulas, María Luisa and Franco Peláez, Francisco Javier and Sánchez Balmaseda, Margarita (2018) Mejora de las Metodologías Docentes para el área de la Electrónica. [Proyecto de Innovación Docente]

García Hemme, Eric and García Hernansanz, Rodrigo and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio and González Díaz, Germán (2015) Meyer Neldel rule application to silicon supersaturated with transition metals. Journal of physics D: applied physics, 48 (7). ISSN 0022-3727

Olea Ariza, Javier (2010) Procesos de implantación iónica para semiconductores de banda intermedia. [Thesis]

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Pulsed Laser Melting Effects on Single Crystal Gallium Phosphide. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 42-45. ISBN 978-1-4244-2838-0

Olea Ariza, Javier and López, E. and Antolín, E. and Martí, A. and Luque, A. and García Hemme, Eric and Pastor, D. and García Hernansanz, Rodrigo and Prado Millán, Álvaro del and González Díaz, Germán (2016) Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap. Journal of physics D: applied physics, 49 (5). ISSN 0022-3727

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del (2014) Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector. Applied physics letters, 104 (21). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si. Journal of Applied Physics, 114 (5). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) Sub-bandgap absorption in Ti implanted Si over the Mott limit. Journal of Applied Physics, 109 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells. Japanese Journal of Applied Physics, 52 (12). ISSN 0021-4922

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Sub-bandgap spectral photo-response analysis of Ti supersaturated Si. Applied physics Letters, 101 (19). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) The intermediate band approach in the third solar cell generation context. In Proceedings of the 2013 Spanish Conference on Electron Devices. IEEE, pp. 297-300. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2010) Thermal stability of intermediate band behavior in Ti implanted Si. Solar Energy Materials and Solar Cells, 94 (11). pp. 1907-1911. ISSN 0927-0248

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2008) Titanium doped silicon layers with very high concentration. Journal of Applied Physics, 104 (1). ISSN 0021-8979

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Olea Ariza, Javier and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio and Voz Sánchez, Cristobal and Gerling, Luis and Puigdollers, Joaquin and Alcubilla, R. (2018) Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer. Solar energy materials and solar cells, 185 . pp. 61-65. ISSN 0927-0248

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2011) Two-layer Hall effect model for intermediate band Ti-implanted silicon. Journal of Applied Physics, 109 (6). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation. Semiconductor Science and Technology, 26 (11). ISSN 0268-1242

This list was generated on Wed Nov 13 22:20:13 2019 CET.