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Number of items: 9.

Piqueras de Noriega, Javier and Méndez Martín, Bianchi and Panin, G. N. and Dutta, P. S. and Dieguez, E. (1996) Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide. In CAS '96 Proceedings - 1996 International Semiconductor Conference. I E E E, pp. 497-506. ISBN 0-7803-3223-7

Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P. S. and Dieguez, E. (1996) Cathodoluminescence microscopy of doped GaSb crystals. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 42 (1-mar). pp. 38-42. ISSN 0921-5107

Pal, U and Piqueras de Noriega, Javier and Dutta, P. S. and Bhat, H. L. and Dubey, G. C. and Kumar, V. and Dieguez, E. (1996) Cathodoluminescence spectroscopy for evaluation of defect passivation in GaSb. In Diagnostic Techniques for Semiconductor Materials Processing. MRS Online Proceedings Library, II (406). Materials Research Soc, pp. 537-542. ISBN 1-55899-309-6

Méndez Martín, Bianchi and Dutta, P. S. and Piqueras de Noriega, Javier and Dieguez, E. (1995) Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide. Applied Physics letter, 67 (18). pp. 2648-2650. ISSN 0003-6951

Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P. S. (1998) Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy. In Defect and Impurity Engineered semiconductors II. MRS Online Proceedings Library (510). Materials Research Society, pp. 639-644. ISBN 1-55899-416-5

Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P. S. and Diéguez, E. (1997) Influence of doping on the native acceptors of gallium antimonide. In Microscopy of Semiconducting Materials 1997. Conference Series- Institute of Physics (157). IOP Publishing LTD, pp. 527-530. ISBN 0-7503-0464-2

Dutta, P. S. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dieguez, E. and Bhat, H. L. (1996) Nature of compensating luminescence centers in Te-diffused and -doped GaSb. Journal of Applied Physics, 80 (2). pp. 1112-1115. ISSN 0021-8979

Panin, G. N. and Dutta, P. S. and Piqueras de Noriega, Javier and Dieguez, E. (1995) P-to n-type Conversion in GaSb by ion-beam milling. Applied Physics Letters, 67 (24). pp. 3584-3586. ISSN 0003-6951

Dutta, P. S. and Sreedhar, A. K. and Bhat, H. L. and Dubey, G. C. and Kumar, V. and Dieguez, E. and Pal, U. and Piqueras de Noriega, Javier (1996) Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment. Journal of Applied Physics, 79 (6). pp. 3246-3252. ISSN 0021-8979

This list was generated on Thu Oct 24 00:12:59 2019 CEST.