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Number of items: 6.

Mártil de la Plaza, Ignacio and González Díaz, Germán and Dueñas, S. and Peláez, R. and Castán, E. and Barbolla, J. (1998) Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures. In Electrically based microstructural characterization II. Materials Research Society Symposium Proceedings, 500 . Materials Research Society, Pennsylvania, USA, pp. 87-92. ISBN 1-55899-405-X

González Díaz, Germán and Martín, J.M. and Barbolla, J. and Castán, E. and Dueñas, S. and Pinacho, R. and Quintanilla, L. (1997) Deep levels in p(+)-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP. Journal of Applied Physics, 81 (7). pp. 3143-3150. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Martín Pacheco, Jaime Miguel and Castán, E. and Dueñas, S. (1995) Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP. Journal of applied physics, 78 (9). pp. 5325-5330. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Castán, E. and Dueñas, S. and Fernández, M. (1998) Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures. Journal of Applied Physics, 83 (1). pp. 332-338. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Barbolla, J. and Castán, E. and Dueñas, S. and Peláez, R. and Pinacho, R. and Quintanilla, L. (1997) Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures. Applied physics Letters, 71 (6). pp. 826-828. ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Castán, E. and Dueñas, S. and Fernández, M. (1998) Good quality Al/SiNx : H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method. Journal of Applied Physics, 83 (1). pp. 600-603. ISSN 0021-8979

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