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Number of items: 6.

González Díaz, Germán and Artús, L. and Blanco, N. and Cuscó, R. and Ibáñez, J. and Long, A.R. and Rahman, M. (2000) Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Journal of Applied Physics, 88 (11). pp. 6567-6570. ISSN 0021-8979

González Díaz, Germán and Blanco, N. and Artús, L. and Cuscó, R. and Ibáñez, J. (1999) Raman scattering by LO phonon-plasmon coupled modes in n-type InP. Physical Review B, 60 (8). pp. 5456-5463. ISSN 0163-1829

González Díaz, Germán and Martín, J.M. and Artús, L. and Cuscó, R. and Ibañez, J. (1997) Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP. Journal of Applied Physics, 82 (8). pp. 3736-3739. ISSN 0021-8979

González Díaz, Germán and Artús, L. and Blanco, N and Cuscó, R. and Hernández, S. (2003) Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering. Journal of Applied Physics, 93 (5). pp. 2659-2662. ISSN 0021-8979

González Díaz, Germán and Artús, L. and Calleja, E. and Cuscó, R. and Iborra, E. and Jiménez, J. and Pastor, D. and Peiró, F. (2006) The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire. Journal of Applied Physics, 100 (4). ISSN 0021-8979

González Díaz, Germán and Martín, J.M. and Artús, L. and Cuscó, R. (1994) Up to fifth-order Raman scattering of InP under nonresonant conditions. Physical Review B, 50 (16). pp. 11552-11555. ISSN 0163-1829

This list was generated on Mon Dec 16 05:35:58 2019 CET.