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Number of items: 10.

Wang, K. and Martin, R. W. and Nogales Díaz, Emilio and Edwards, P. R. and O’Donnell, K. P. and Lorenz, K. and Alves, E. and Watson, I. M. (2006) Cathodoluminescence of rare earth implanted AllnN. Applied physics letters, 89 (13). ISSN 0003-6951

Nogales Díaz, Emilio and Hidalgo Alcalde, Pedro and Lorenz, K. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Alves, E. (2011) Cathodoluminescence of rare earth implanted Ga_2O_3 and GeO_2 nanostructures. Nanotechnology, 22 (28). ISSN 0957-4484

Nogales Díaz, Emilio and López, I. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Lorenz, K. and Alves, E. and García, J.A. (2012) Doped gallium oxide nanowires for photonics. In Oxide-based materials and devices III. Proceedings- Spie the International Society for Optical Engineering (8263). Spie-int soc optical engineering. ISBN 978-0-8194-8906-7

Catarino, N. and Nogales Díaz, Emilio and Franco, N. and Darakchieva, V. and Miranda, S.M.C. and Méndez Martín, Bianchi and Alves, E. and Marques, J.F. and Lorenz, K. (2012) Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN. EPL, 97 (6). ISSN 0295-5075

Nogales Díaz, Emilio and Martin, R. V. and O'Donnell, K. P. and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2006) Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing. Applied physics letters, 8 (3). ISSN 0003-6951

Lorenz, K. and Nogales Díaz, Emilio and Nédélec, R. and Penner, J. and Vianden, R. and Alves, E. and Martin, R.W. and O`Donnell, K.P. (2006) Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN. In GaN, AIN, InN related materials. MRS online Proceedings Library (892). Materials Research Soc. ISBN 1-55899-846-2

Peres, Marco and Fernandes, A.J.S. and Oliveira, F.J. and Alves, L.C. and Alves, E. and Monteiro, T.S. and Cardoso, S. and Alonso Orts, Manuel and Nogales Díaz, Emilio and Méndez Martín, Bianchi (2019) Micro-opto-electro-mechanical device based on flexible beta-Ga_2O_3 micro-lamellas. ECS journal of solid state science and technology, 8 (7). pp. 3235-3241. ISSN 2162-8769

Wang, K. and Martin, R. W. and O’Donnell, K. P. and Katchkanov, V. and Nogales Díaz, Emilio and Lorenz, K. and Alves, E. and Ruffenach, S. and Briot, O. (2005) Selectively excited photoluminescence from Eu-implanted GaN. Applied physics letters, 87 (11). ISSN 0003-6951

López, Iñaqui and Lorenz, K. and Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Alves, E. and García, J. A. (2014) Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga_2O_3 nanowires during annealing treatments. Journal of Materials Science, 49 (3). pp. 1279-1285. ISSN 0022-2461

Nogales Díaz, Emilio and García, J. A. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Lorenz, K. and Alves, E. (2008) Visible and infrared luminescence study of Er doped β-Ga_2O_3 and Er_3 Ga_5O_12. Journal of Physics D: Applied Physics, 41 (6). ISSN 0022-3727

This list was generated on Mon Oct 14 23:53:47 2019 CEST.